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zmm1b...zmm200b silicon planar zener diodes in minimelf case especially for automatic insertion. the zener voltages are graded according to the international e 24 standard. smaller voltage tolerances and higher zener voltages are upon request. these diodes are also available in do-35 case with the type designation bzx55b absolute maximum ratings (ta = 25 o c) symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 o c storage temperature range t s -55 to +175 o c 1) valid provided that electrodes ar e kept at ambient temperature characteristics at t amb = 25 o c symbol min. typ. max. unit thermal resistance junction to ambient air r tha - - 0.3 1) k/mw 1) valid provided that electrodes ar e kept at ambient temperature ll-34 xinghe electronics e?o??
zmm1b...zmm200b zener voltage range 1) dynamic resistance reverse leakage current temp coefficient of zener voltage l zt for v zt 2) r zjt r zjk at i zk t a =25 o ct a = 125 o c type vznom v ma v ? ? ma a a i r at v r v tkvz %/k zmm 1b 3) 0.75 5 0.73?0.77 <8 <50 1 -- -- -- -0.26...-0.23 zmm 2b0 2.0 5 1.96?2.04 <85 <600 1 <100 <200 1 -0.09...-0.06 zmm 2b2 2.2 5 2.15?2.25 <85 <600 1 <75 <160 1 -0.09...-0.06 zmm 2b4 2.4 5 2.35?2.45 <85 <600 1 <50 <100 1 -0.09...-0.06 zmm 2b7 2.7 5 2.64?2.75 <85 <600 1 <10 <50 1 -0.09...-0.06 zmm 3b0 3.0 5 2.94?3.06 <85 <600 1 <4 <40 1 -0.08...-0.05 zmm 3b3 3.3 5 3.23?3.36 <85 <600 1 <2 <40 1 -0.08...-0.05 zmm 3b6 3.6 5 3.52?3.67 <85 <600 1 <2 <40 1 -0.08...-0.05 zmm 3b9 3.9 5 3.82?3.98 <85 <600 1 <2 <40 1 -0.08...-0.05 zmm 4b3 4.3 5 4.21?4.39 <75 <600 1 <1 <20 1 -0.06...-0.03 zmm 4b7 4.7 5 4.60?4.80 <60 <600 1 <0.5 <10 1 -0.05...+0.02 zmm 5b1 5.1 5 4.99?5.20 <35 <550 1 <0.1 <2 1 -0.02...+0.02 zmm 5b6 5.6 5 5.49?5.71 <25 <450 1 <0.1 <2 1 -0.05...+0.05 zmm 6b2 6.2 5 6.07?6.32 <10 <200 1 <0.1 <2 2 0.03...0.06 zmm 6b8 6.8 5 6.66?6.94 <8 <150 1 <0.1 <2 3 0.03...0.07 zmm 7b5 7.5 5 7.35?7.65 <7 <50 1 <0.1 <2 5 0.03...0.07 zmm 8b2 8.2 5 8.04?8.36 <7 <50 1 <0.1 <2 6.2 0.03...0.08 zmm 9b1 9.1 5 8.92?9.28 <10 <50 1 <0.1 <2 6.8 0.03...0.09 zmm 10b 10 5 9.8?10.2 <15 <70 1 <0.1 <2 7.5 0.03...0.1 zmm 11b 11 5 10.8?11.2 <20 <70 1 <0.1 <2 8.2 0.03...0.11 zmm 12b 12 5 11.8?12.2 <20 <90 1 <0.1 <2 9.1 0.03...0.11 zmm 13b 13 5 12.7?13.3 <26 <110 1 <0.1 <2 10 0.03...0.11 zmm 15b 15 5 14.7?15.3 <30 <110 1 <0.1 <2 11 0.03...0.11 zmm 16b 16 5 15.7?16.3 <40 <170 1 <0.1 <2 12 0.03...0.11 zmm 18b 18 5 17.6?18.4 <50 <170 1 <0.1 <2 13 0.03...0.11 zmm 20b 20 5 19.6?20.4 <55 <220 1 <0.1 <2 15 0.03...0.11 zmm 22b 22 5 21.6?22.5 <55 <220 1 <0.1 <2 16 0.04...0.12 zmm 24b 24 5 23.5?24.5 <80 <220 1 <0.1 <2 18 0.04...0.12 zmm 27b 27 5 26.4?27.6 <80 <220 1 <0.1 <2 20 0.04...0.12 zmm 30b 30 5 29.4?30.6 <80 <220 1 <0.1 <2 22 0.04...0.12 zmm 33b 33 5 32.3?33.7 <80 <220 1 <0.1 <2 24 0.04...0.12 zmm 36b 36 5 35.2?36.8 <80 <220 1 <0.1 <2 27 0.04...0.12 zmm 39b 39 2.5 38.2?39.8 <90 <500 0.5 <0.1 <5 30 0.04...0.12 zmm 43b 43 2.5 42.1?43.9 <90 <500 0.5 <0.1 <5 33 0.04...0.12 zmm 47b 47 2.5 46.0?48.0 <110 <600 0.5 <0.1 <5 36 0.04...0.12 zmm 51b 51 2.5 49.9?52.1 <125 <700 0.5 <0.1 <10 39 0.04...0.12 zmm 56b 56 2.5 54.8?57.2 <135 <700 0.5 <0.1 <10 43 0.04...0.12 zmm 62b 62 2.5 60.7?63.3 <150 <1000 0.5 <0.1 <10 47 0.04...0.12 zmm 68b 68 2.5 66.6?69.4 <200 <1000 0.5 <0.1 <10 51 0.04...0.12 zmm 75b 75 2.5 73.5?76.5 <250 <1000 0.5 <0.1 <10 56 0.04...0.12 zmm 82b 82 2.5 80.3?83.7 <300 <1500 0.25 <0.1 <10 62 0.05...0.12 zmm 91b 91 1 89.1?92.9 <450 <2000 0.1 <0.1 <10 68 0.05...0.12 zmm 100b 100 1 98.0?102.0 <450 <5000 0.1 <0.1 <10 75 0.05...0.12 zmm 110b 110 1 107.8?112.2 <600 <5000 0.1 <0.1 <10 82 0.05...0.12 zmm 120b 120 1 117.6?122.4 <800 <5500 0.1 <0.1 <10 91 0.05...0.12 zmm 130b 130 1 127.4?132.6 <950 <6000 0.1 <0.1 <10 100 0.05...0.12 zmm 150b 150 1 147.0?153.0 <1250 <6500 0.1 <0.1 <10 110 0.05...0.12 zmm 160b 160 1 156.8?163.2 <1400 <7000 0.1 <0.1 <10 120 0.05...0.12 zmm 180b 180 1 176.4?183.6 <1700 <8500 0.1 <0.1 <10 130 0.05...0.12 zmm 200b 200 1 196.0?204.0 <2000 <10000 0.1 <0.1 <10 150 0.05...0.12 1) tested with pulses t p = 20 ms. 1) valid provided that electrodes ar e kept at ambient temperature 2) the zmm1 is a silicon diode with operation in forward direction. hence, the index of all parameters should be ?f? instead of ?z ?. connect the cathode electrode to the negative pole. xinghe electronics e?o??
zmm1b...zmm200b 0 0 10 20 vz 40 30 zmm36b zmm15b test current iz 5ma 10 20 iz zmm12b breakdown characteristics t j = constant (pulsed) ma 30 0 01 zmm10b 24 3 ZMM27B zmm18b zmm22b zmm33b 57 6 vz tj=25 c zmm... o 810 9 zmm3b3 zmm3b9 test current iz 5ma 20 10 30 breakdown characteristics t j = constant (pulsed) iz 40 50 ma zmm1b o tj=25 c zmm2b7 zmm8b2 zmm5b6 zmm6b8 zmm4b7 zmm... v v xinghe electronics e?o??
zmm1b...zmm200b 6 100 admissible power dissipation versus ambient temperature valid provided that electrodes are kept at ambient temperature. 2 10 -3 0 -4 10 -5 10 10 -2 10 -1 10 i f 10 1 3 10 ma 0.6 0.4 0.2 v f 1 v 0.8 tj=25 c tj=100 c o o 0 0 100 100 t amb 200 p tot 300 400 40 30 20 010 forward characteristics zmm... 0 2 4 90 70 80 60 50 500 mw vz o 200 c v zmm... breakdown characteristics t j = constant (pulsed) test current iz 5ma iz 8 10 ma zmm43b zmm39b zmm51b zmm... tj=25 c o zmm47b xinghe electronics e?o??
zmm1b...zmm200b 1 t 1 10 s 100v v r =2v 1 10 234 5 3 2 4 5 10 2 vz at iz=5 ma 5 4 3 v r =1v c tot zmm... pf 3 100 7 2 v r =2v 5 4 1000 7 v r =1v t j =25 c o capacitance versus zener voltage -5 10 10 -4 10 -3 10 -2 -1 t p 10 1 5 0.1 1 2 5 1 2 3 4 10 iz 2 5 2 5 100ma dynamic resistance versus zener current r zj 10 2 4 3 5 100 0.1 2 5 1 o t j =25 c zmm... 10 2 5 iz 2 5 100ma pulse thermal resistance versus pulse duration valid provided that the electrodes are kept at ambient temperature. k/w zmm... r tha 4 0.1 7 3 2 4 5 0.05 0.01 0.02 10 3 2 v=0 t p t v= t p p i 0.5 0.2 10 7 5 2 2 5 4 3 10 7 3 zmm... 2 5 4 3 10 2 3 r zj 100 4 5 2 5 3 4 1000 t j =25 c o dynamic resistance versus zener current 2b7 3b6 4b7 5b1 zmm5b6 33b 27b 15b 12b zmm1b 22b 18b 10b 6b8/8b2 zmm6b2 xinghe electronics e?o??
zmm1b...zmm200b 10 o 10 t j =25 c vz at iz=5 ma iz=5 ma 1 1 2 10 4 3 5 234 5 100v 1 -5 23 vz at iz=5 ma 5 4 10 3 24 5 100v zmm... 5 t j =25 c 3 2 5 4 10 7 2 dynamic resistance versus zener voltage 100 r zj 5 4 3 7 10 0.1 3 2 5 4 2 3 5 4 1 iz 24 3 2 10 7 2 5 7 3 4 r zj temperature dependence of zener voltage versus zener voltage o 0 5 10 15 25 20 vz tj mv/k 20ma iz=1ma 5ma zmm... vz tj 10ma 1 1 24 3 5 negative 5 3 2 4 10 2 4 3 2 r zth 10 5 r zth =r tha .vz. 3 2 4 5 100v vz at iz=5 ma 10 24 3 5 positive zmm... dynamic resistance versus zener current 3 thermal differential resistance versus zener voltage valid provided that electrodes are kept at ambient temperature 3 zmm... zmm36b 39b 43b 47b+51b xinghe electronics e?o??
5.1 0 60 at iz=5 ma -0.2 0 -0.1 20 40 x) c o t j 100 3.6 1 80 120 140 4.7 change of zener voltage versus junction temperature vz 0.3 0.1 0.2 0.4 0.6 0.5 0.8 0.7 v x) vz=35 v 5.6 6.2 5.9 8 7 25 15 10 zmm... 0 10 -0.4 1 2 -0.2 34 5 vz at iz=5 ma 23 5 4 100v 0.6 0.2 0.4 0.8 1.2 1 change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz iz=5 ma 1.6 1.4 v zmm... zmm... 40 40 0 0 20 20 vz tj 60 80 100 100v 60 vz at iz=5 ma 80 iz=5 ma vz temperature dependence of zener voltage versus zener voltage mv/k zmm... 3 0 -1 20 40 60 1 0 2 iz=5 ma 120 t j 100 80 140 o c 6 4 5 7 8 9 36v 43v vz bei iz=5ma 51v change of zener voltage versus junction temperature v vz zmm1b...zmm200b xinghe electronics e?o??
4 40 0 020 vz 1 2 3 100v 60 vz at iz=5 ma 80 iz=5 ma change of zener voltge from turn-on up to the point of thermal equilibrium versus zener voltage vz=r zth .iz v 5 zmm... iz=2 ma zmm1b...zmm200b xinghe electronics e?o??

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